Title: Nonequilibrium Processes in the Highly Compensated Silicon
Authors: Dilmurod Bobonov
Volume: 4
Issue: 8
Pages: 290-293
Publication Date: 2020/08/28
Abstract:
- It is shown that by controlling the structure of complexes - clusters of impurity atoms and their concentration in highly compensated silicon - one can change the fundamental parameters of the starting material, which allows them to be used in the development of fundamentally new classes of nanoelectronic devices. In practice, this is a new approach to the creation of quantum-dimensional structures in silicon.