Title: Epitaxial Growth of Highly Compressively Strained Gesn Alloys Up To 12.5% Sn
Authors: Jurabek Abdiyev,Sadulla Saydullayev, Elyor G\'aybulloyev, Sherzod Yarashev, Bekzod Erkinov
Volume: 5
Issue: 3
Pages: 59-66
Publication Date: 3/28/2021//
Abstract:
This paper reports on the growth and characterization of highly compressive strained GeSn layers on thin strain relaxed Ge virtual substrates on Si wafers. Sn concentration up to 12.5%, which is about more than 10 times the thermal equilibrium predicted f