Title: Impact of the Growth Strategy and Device Fabrication on the Alloy Homogeneity in Optoelectronic Grade Sn-Rich GeSn
Authors: Jurabek Abdiyev
Sadulla Saydullayev
Elyor G\'aybulloyev
Sherzod Yarashev
Bekzod Erkinov
Volume: 5
Issue: 3
Pages: 67-74
Publication Date: 3/28/2021//
Abstract:
High Sn-content Ge1-xSnx alloys are excellent candidates for the fabrication of electronic and optoelectronic monolithically integrated devices on CMOS platforms. The fabrication of high performance devices requires high quality GeSn layers free of Sn pre