Title: Growth and Characterization of Manganese Nickel sulphide thin films by SILAR method
Authors: Achokuba, Chukwuebuka Henry, Ottih, I. E, Okereke, N. A
Volume: 10
Issue: 5
Pages: 1-7
Publication Date: 2026/05/28
Abstract:
The effects of ion concentration on manganese Nickel sulphide thin films were investigated using successive Ionic Layer adsorption and reaction (SILAR) method. Manganese Nickel sulphide thin films were grown on a glass substrate using Manganese Chloride (MnCl2), Nickel Chloride (NiCl2) and Sodium sulfide (Na2S) as precursor solutions. Structural analysis using X-ray diffraction (XRD) the data confirm that increase in conc. results in increase in crystallinity resulting in larger and better ordered grain which is essential in enhancing performance of MnNiS in optoelectronics and sensing applications. Uv-visible Spectrophotometer-the analysis focused on absorbance, transmittance, reflectance and optical band gap. The absorbance spectra showed broad absorption in the visible region of wavelength of 400nm-700nm and Transmittance spectra showed low value. The reflectance value of MnNiS were found to be consistently low, the lowest reflectance was observed in the visible region of 400-700nm.this behavior suggest that MnNiS thin films effectively suppress light reflection making it viable application in solar energy.(Coating of solar energy plates).Optical Energy band gap showed a steady decrease in value from 2.43eV to 2.18eV . Low energy band gap allows the films to be used in optoelectronics which combines optics and electronic devices, focusing on generation, transmission and detection of light, which find applications in communication.